Recently, oxide hetero-interfaces and inherent 2-dimensional electron gas attracted great attentions. Here we report the fabrication of spintronics devices based upon the interface ferromagnetism of LaAlO3/SrTiO3 (LAO/STO) heterostructures. The choice of the LAO/STO structure was inspired by its high-mobility two-dimensional electron gas and a number of experimental investigations revealing the spin ordering at this oxide interface. However, the possibility and mechanisms of this interfacial magnetism are still debated and the spin degree of freedom has not yet been employed adequately. The spin injection in the device in this study is enabled by an appropriately thin epitaxial Ti interlayer. Tunnelling magnetoresistance (TMR) is observed and shows such a strong in-plane anisotropy that the sign changes with the direction of applied magnetic field.