산화물 버퍼층을 적용한 Zn2SnO4 박막의 열처리 특성: Thermal Annealing Effects of Zn2SnO4 Thin Films Using Oxide Buffer-Layer

by Gyo Jung Lee (Ph.D Candidate)

Thursday May 9, 2013, 2:50 PM → 3:40 PM Asia/Seoul

119호 (제1과학관)

발표제목:  ZnO seed-layer를 적용한 Zn2SnO4 박막의 열처리에 따른 특성 변화

Effects of thermal annealing on the structural, electrical and optical properties of transparent semiconducting Zn2SnO4 (ZTO) thin films using ZnO or SnO2 buffer layer have been investigated. ZnO or SnO2 buffer layers with a thickness of 20nm were deposited on soda-lime glass and annealed at 550°C in air. The ZTO thin film with the thickness of about 100nm is prepared by the RF-magnetron sputtering technique on soda-lime glass and buffer layers using powder target. ZTO thin films prepared in this way were annealed in vacuum furnace with varying temperatures ranging from 100 °C to 550 °C for a period of 1 hr under the high vacuum of 5.0×10-5 Torr.
The experimental results show that the ZTO on ZnO buffer layer films as increasing annealing temperature possess inverse cubic spinel structure with a preferred grain orientation in the (311) direction by ZnO buffer layer. The average transmittances of the ZTO on ZnO buffer layer films are approximately 83% in visible region regardless annealing temperature. it's about 3% higher than ZTO films. The increasing annealing temperature leads to the increase in Hall mobility and electron concentration, resulting in the decrease of resistivity. The optical band gap of ZTO films increases from 3.45 eV to 3.65 eV with the increase of annealing temperature by Burstein-Moss shift. but ZTO on ZnO buffer layer films increases from 3.35 eV to 3.45 eV with the increase of annealing temperature because of ZnO buffer layer.

Thesis Advisor: Prof. Sang-Ho Sohn