단면 스트립 실리콘 검출기 디자인 최적화 연구: Design optimization of AC-type single-sided strip silicon detector

by Hye Bin Jeon (MS Candidate)

Wednesday Nov 26, 2014, 2:00 PM → 2:30 PM Asia/Seoul

119호 (제1과학관)

Silicon detectors have been widely used in various areas because of their good energy and position resolutions. Especially, strip silicon sensor has been used for tracking devices in high energy and nuclear physics experiments. The high intensity rare isotope accelerator is being constructed in Deajeon, S. Korea and we designed AC-type single-sided silicon strip detectors (SSSDs) to identify charges of the particles and measure their trajectories. To determine optimal design parameters, four design parameters in the SSSD design such as a p+ implant width to strip pitch (I/P), width of metal layer of coupling capacitor, effect of n+-edge field shaper, and distance between guard-ring and sensor edge (DGS) were studied. The detectors were fabricated on high resistivity and n-type silicon wafer of 500 μm thickness. The SSSDs with strip pitch of 730 μ m have 32 readout strips and a size of the sensors is 40.0 mmx25.5 mm. Electrical characteristics of the fabricated sensor directly was measured to show the quality of the manufactured sensor, and then the optimal design parameters in terms of the leakage currents were searched as I/P=0.4, metal width which is 2/3 of p+ strip or wider than p+ strip by 20 μm, and DGS=1000 μm with the field shaper. We also did performance tests with 90Sr radioactive source and one of SSSDs with the optimal design parameters. For this purpose, the sensor were combined with a commercial electronics. measurement results of the performances, a signal-to-noise ratio was obtained as 29.1.

Thesis Advisor: Prof. Hwanbae Park